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GermanyNTHC5513T1G
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
NTHC5513T1G
DESCRIZIONE
MOSFET N/P-CH 20V 2.9A CHIPFET
DESCRIZIONE DETTAGLIATA
Mosfet Array 20V 2.9A, 2.2A 1.1W Surface Mount ChipFET™
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
NTHC5513T1G Models
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.9A, 2.2A
Rds On (Max) @ Id, Vgs
80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
180pF @ 10V
Power - Max
1.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
ChipFET™
Base Product Number
NTHC5513
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
NTHC5513T1GOS-ND
NTHC5513T1GOS
ONSNTHC5513T1G
=NTHC5513T1GOSCT-ND
2832-NTHC5513T1G
NTHC5513T1GOSTR
NTHC5513T1GOSDKR
NTHC5513T1GOSCT
2156-NTHC5513T1G-OS
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi NTHC5513T1G
Documenti e supporti
Datasheets
1(NTHC5513)
Environmental Information
()
PCN Obsolescence/ EOL
1(Obsolete Notice 15/Dec/2022)
PCN Packaging
1(Covering Tape/Material Chg 20/May/2016)
HTML Datasheet
1(NTHC5513)
EDA Models
1(NTHC5513T1G Models)
Quantità Prezzo
-
Sostituti
-