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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF7220GTRPBF
DESCRIZIONE
MOSFET P-CH 14V 11A 8SO
DESCRIZIONE DETTAGLIATA
P-Channel 14 V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
4,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
14 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
12mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
8075 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IRF7220GTRPBFCT
IRF7220GTRPBFTR
IRF7220GTRPBFDKR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7220GTRPBF
Documenti e supporti
Datasheets
1(IRF7220GPBF)
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HTML Datasheet
1(IRF7220GPBF)
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Sostituti
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