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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFU48ZPBF
DESCRIZIONE
MOSFET N-CH 55V 42A IPAK
DESCRIZIONE DETTAGLIATA
N-Channel 55 V 42A (Tc) 91W (Tc) Through Hole IPAK (TO-251AA)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
75
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1720 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
91W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
*IRFU48ZPBF
SP001568148
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU48ZPBF
Documenti e supporti
Datasheets
1(IRF(R,U)48ZPbF)
Other Related Documents
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Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
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PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF(R,U)48ZPbF)
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