English
Spain
Rusia
China
GermanySSM3K35MFV,L3F
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SSM3K35MFV,L3F
DESCRIZIONE
MOSFET N-CH 20V 180MA VESM
DESCRIZIONE DETTAGLIATA
N-Channel 20 V 180mA (Ta) 150mW (Ta) Surface Mount VESM
PRODUTTORE
Toshiba Semiconductor and Storage
INIZIATIVA STANDARD
MODELLO EDACAD
SSM3K35MFV,L3F Models
PACCHETTO STANDARD
8,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4V
Rds On (Max) @ Id, Vgs
3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 3 V
FET Feature
-
Power Dissipation (Max)
150mW (Ta)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
VESM
Package / Case
SOT-723
Base Product Number
SSM3K35
Classificazioni ambientali e di esportazione
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage SSM3K35MFV,L3F
Documenti e supporti
Featured Product
1(Server Solutions)
EDA Models
1(SSM3K35MFV,L3F Models)
Quantità Prezzo
-
Sostituti
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