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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
TK40J20D,S1F(O
DESCRIZIONE
MOSFET N-CH 200V 40A TO3P
DESCRIZIONE DETTAGLIATA
N-Channel 200 V 40A (Ta) 260W (Tc) Through Hole TO-3P(N)
PRODUTTORE
Toshiba Semiconductor and Storage
INIZIATIVA STANDARD
MODELLO EDACAD
TK40J20D,S1F(O Models
PACCHETTO STANDARD
100
STOCK FORNITORI
Specifiche tecniche
Mfr
Toshiba Semiconductor and Storage
Series
π-MOSVIII
Package
Tray
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
44mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4300 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
260W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3
Base Product Number
TK40J20
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK40J20D,S1F(O
Documenti e supporti
EDA Models
1(TK40J20D,S1F(O Models)
Quantità Prezzo
-
Sostituti
-