Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
TSM1NB60SCT B0G
DESCRIZIONE
MOSFET N-CH 600V 500MA TO92
DESCRIZIONE DETTAGLIATA
N-Channel 600 V 500mA (Tc) 2.5W (Tc) Through Hole TO-92
PRODUTTORE
Taiwan Semiconductor Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,000

Specifiche tecniche

Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
138 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92
Package / Case
TO-226-3, TO-92-3 (TO-226AA)

Classificazioni ambientali e di esportazione

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

TSM1NB60SCT B0GDKR
TSM1NB60SCT B0GDKRINACTIVE-ND
TSM1NB60SCT B0GTR-ND
TSM1NB60SCTB0GCTINACTIVE
TSM1NB60SCTB0G
TSM1NB60SCT B0GCT
TSM1NB60SCT B0GCTINACTIVE-ND
TSM1NB60SCT B0G-ND
TSM1NB60SCT B0GCT-ND
TSM1NB60SCT B0GDKR-ND
TSM1NB60SCTB0GDKRINACTIVE
TSM1NB60SCT B0GTR

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM1NB60SCT B0G

Documenti e supporti

Datasheets
1(TSM1NB60SCT)
Environmental Information
()
HTML Datasheet
1(TSM1NB60SCT)

Quantità Prezzo

-

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