English
Spain
Rusia
China
GermanySTH15NB50FI
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
STH15NB50FI
DESCRIZIONE
MOSFET N-CH 500V 10.5A ISOWAT218
DESCRIZIONE DETTAGLIATA
N-Channel 500 V 10.5A (Tc) 80W (Tc) Through Hole ISOWATT-218
PRODUTTORE
STMicroelectronics
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
30
STOCK FORNITORI
Specifiche tecniche
Mfr
STMicroelectronics
Series
PowerMESH™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ISOWATT-218
Package / Case
ISOWATT-218-3
Base Product Number
STH15N
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STH15NB50FI
Documenti e supporti
Datasheets
1(ST(H,W)15NB50(FI))
HTML Datasheet
1(ST(H,W)15NB50(FI))
Quantità Prezzo
-
Sostituti
-