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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF6100
DESCRIZIONE
MOSFET P-CH 20V 5.1A 4FLIPFET
DESCRIZIONE DETTAGLIATA
P-Channel 20 V 5.1A (Ta) 2.2W (Ta) Surface Mount 4-FlipFet™
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
6,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
65mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-FlipFet™
Package / Case
4-FlipFet™
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IRF6100TR
*IRF6100
IRF6100CT
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6100
Documenti e supporti
Datasheets
1(IRF6100)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF6100)
Simulation Models
1(IRF6100 Saber Model)
Quantità Prezzo
-
Sostituti
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