Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
IPU50R950CEAKMA2
DESCRIZIONE
MOSFET N-CH 500V 4.3A TO251-3
DESCRIZIONE DETTAGLIATA
N-Channel 500 V 4.3A (Tc) 53W (Tc) Through Hole PG-TO251-3
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,500

Specifiche tecniche

Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id
3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
231 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
53W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPU50R

Classificazioni ambientali e di esportazione

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

2156-IPU50R950CEAKMA2
ROCINFIPU50R950CEAKMA2
SP001396806

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPU50R950CEAKMA2

Documenti e supporti

Datasheets
1(IPD50R950CE, IPU50R950CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPD50R950CE, IPU50R950CE)
Simulation Models
1(CoolMOS™ Power MOSFET 500V C3 Spice Model)

Quantità Prezzo

-

Sostituti

Parte n. : STD7NM80
Produttore. : STMicroelectronics
Quantità disponibile. : 4,929
Prezzo unitario. : $18.33000
Tipo sostitutivo. : Similar