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GermanyAUIRL7766M2TR
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
AUIRL7766M2TR
DESCRIZIONE
MOSFET N-CH 100V 10A DIRECTFET
DESCRIZIONE DETTAGLIATA
N-Channel 100 V 10A (Ta) 2.5W (Ta), 62.5W (Tc) Surface Mount DirectFET™ Isometric M4
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
4,800
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
5305 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 62.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric M4
Package / Case
DirectFET™ Isometric M4
Base Product Number
AUIRL7766
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRL7766M2TR
Documenti e supporti
Datasheets
1(AUIRL7766M2TR(1))
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(AUIRL7766M2TR(1))
Simulation Models
1(AUIRL7766M2 Spice Model)
Quantità Prezzo
-
Sostituti
-