English
Spain
Rusia
China
GermanyPMEM4030NS,115
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
PMEM4030NS,115
DESCRIZIONE
TRANS NPN 50V 2A 8SO
DESCRIZIONE DETTAGLIATA
Bipolar (BJT) Transistor NPN + Diode (Isolated) 50 V 2 A 100MHz 1 W Surface Mount 8-SO
PRODUTTORE
NXP USA Inc.
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,000
STOCK FORNITORI
Specifiche tecniche
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN + Diode (Isolated)
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
370mV @ 300mA, 3A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A, 2V
Power - Max
1 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
PMEM4
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Altri nomi
934057775115
PMEM4030NS T/R-ND
PMEM4030NS T/R
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. PMEM4030NS,115
Documenti e supporti
Datasheets
1(PMEM4030NS)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PMEM4030NS)
Quantità Prezzo
-
Sostituti
-