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GermanyFDD3510H
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
FDD3510H
DESCRIZIONE
MOSFET N/P-CH 80V 4.3A TO252
DESCRIZIONE DETTAGLIATA
Mosfet Array 80V 4.3A, 2.8A 1.3W Surface Mount TO-252 (DPAK)
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
FDD3510H Models
PACCHETTO STANDARD
2,500
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
PowerTrench®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel, Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
4.3A, 2.8A
Rds On (Max) @ Id, Vgs
80mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 40V
Power - Max
1.3W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package
TO-252 (DPAK)
Base Product Number
FDD3510
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
FDD3510HTR
2156-FDD3510H-OS
ONSONSFDD3510H
FDD3510HCT
FDD3510HDKR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi FDD3510H
Documenti e supporti
Datasheets
1(FDD3510H)
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
()
PCN Obsolescence/ EOL
()
PCN Design/Specification
()
PCN Assembly/Origin
1(Korea Fab Site Add 3/Jan/2017)
PCN Packaging
()
HTML Datasheet
1(FDD3510H)
EDA Models
1(FDD3510H Models)
Quantità Prezzo
-
Sostituti
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