Technology
                    
					SiC (Silicon Carbide) Schottky
					
                   
                    Voltage - DC Reverse (Vr) (Max)
                    
					1200 V
					
                   
                    Current - Average Rectified (Io)
                    
					10A
					
                   
                    Voltage - Forward (Vf) (Max) @ If
                    
					1.8 V @ 10 A
					
                   
                    Speed
                    
					No Recovery Time > 500mA (Io)
					
                   
                    Reverse Recovery Time (trr)
                    
					0 ns
					
                   
                    Current - Reverse Leakage @ Vr
                    
					30 µA @ 1200 V
					
                   
                    Capacitance @ Vr, F
                    
					772pF @ 0V, 1MHz
					
                   
                    Mounting Type
                    
					Through Hole
					
                   
                    Supplier Device Package
                    
					TO-247AC
					
                   
                    Operating Temperature - Junction
                    
					-55°C ~ 175°C
					
                   
                    Base Product Number
                    
					S4D1012