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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
STI11NM60ND
DESCRIZIONE
MOSFET N-CH 600V 10A I2PAK
DESCRIZIONE DETTAGLIATA
N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole I2PAK
PRODUTTORE
STMicroelectronics
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
STMicroelectronics
Series
FDmesh™ II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
850 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STI11N
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STI11NM60ND
Documenti e supporti
Datasheets
1(STx11NM60ND)
HTML Datasheet
1(STx11NM60ND)
Quantità Prezzo
-
Sostituti
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