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GermanyIRFBA90N20DPBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFBA90N20DPBF
DESCRIZIONE
MOSFET N-CH 200V 98A SUPER-220
DESCRIZIONE DETTAGLIATA
N-Channel 200 V 98A (Tc) 650W (Tc) Through Hole SUPER-220™ (TO-273AA)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
23mOhm @ 59A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
650W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
SUPER-220™ (TO-273AA)
Package / Case
TO-273AA
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SP001551776
*IRFBA90N20DPBF
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFBA90N20DPBF
Documenti e supporti
Datasheets
1(IRFBA90N20DPbF)
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Simulation Models
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Quantità Prezzo
-
Sostituti
Parte n. : STW75NF20
Produttore. : STMicroelectronics
Quantità disponibile. : 0
Prezzo unitario. : $4.78000
Tipo sostitutivo. : Similar
Quantità disponibile. : 0
Prezzo unitario. : $4.78000
Tipo sostitutivo. : Similar