Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
FQP7P20
DESCRIZIONE
MOSFET P-CH 200V 7.3A TO220-3
DESCRIZIONE DETTAGLIATA
P-Channel 200 V 7.3A (Tc) 90W (Tc) Through Hole TO-220-3
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
FQP7P20 Models
PACCHETTO STANDARD

Specifiche tecniche

Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
690mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
770 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP7

Classificazioni ambientali e di esportazione

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

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Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQP7P20

Documenti e supporti

Datasheets
1(FQP7P20)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
()
EDA Models
1(FQP7P20 Models)
Product Drawings
1(TO220B03 Pkg Drawing)

Quantità Prezzo

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Sostituti

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