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GermanyUNR411100A
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
UNR411100A
DESCRIZIONE
TRANS PREBIAS PNP 50V NS-B1
DESCRIZIONE DETTAGLIATA
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 300 mW Through Hole NS-B1
PRODUTTORE
Panasonic Electronic Components
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
5,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Panasonic Electronic Components
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
80 MHz
Power - Max
300 mW
Mounting Type
Through Hole
Package / Case
3-SIP
Supplier Device Package
NS-B1
Base Product Number
UNR411
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
UNR411100ATB
UNR411100ACT
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Panasonic Electronic Components UNR411100A
Documenti e supporti
Datasheets
1(UNR411x Series)
Featured Product
1(Wearables Technology Components)
HTML Datasheet
1(UNR411x Series)
Product Drawings
()
Quantità Prezzo
-
Sostituti
-