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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IPI80N06S2L11AKSA2
DESCRIZIONE
MOSFET N-CH 55V 80A TO262-3
DESCRIZIONE DETTAGLIATA
N-Channel 55 V 80A (Tc) 158W (Tc) Through Hole PG-TO262-3-1
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
500
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2075 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
158W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI80N
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
INFINFIPI80N06S2L11AKSA2
SP001061396
2156-IPI80N06S2L11AKSA2
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI80N06S2L11AKSA2
Documenti e supporti
Datasheets
1(IPx80N06S2L-11)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Mult Dev EOL 9/Sep/2019)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
Simulation Models
1(OptimOS Spice Model)
Quantità Prezzo
QUANTITÀ: 314
Prezzo unitario: $0.96
Imballaggio: Bulk
Moltiplicatore minimo: 314
Imballaggio: Bulk
Moltiplicatore minimo: 314
Sostituti
-