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GermanyIRLHM630TR2PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRLHM630TR2PBF
DESCRIZIONE
MOSFET N-CH 30V 21A PQFN
DESCRIZIONE DETTAGLIATA
N-Channel 30 V 21A (Ta), 40A (Tc) Surface Mount PQFN (3x3)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
400
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs
3.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
3170 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
PQFN (3x3)
Package / Case
8-VQFN Exposed Pad
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SP001550422
IRLHM630TR2PBFCT
IRLHM630TR2PBFTR
IRLHM630TR2PBFDKR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLHM630TR2PBF
Documenti e supporti
Datasheets
1(IRLHM630PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRLHM630PbF)
Quantità Prezzo
-
Sostituti
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