English
Spain
Rusia
China
GermanyIRFH4210DTRPBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFH4210DTRPBF
DESCRIZIONE
MOSFET N-CH 25V 44A PQFN
DESCRIZIONE DETTAGLIATA
N-Channel 25 V 44A (Ta) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
4,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
44A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4812 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PQFN (5x6)
Package / Case
8-PowerTDFN
Base Product Number
IRFH4210
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
2156-IRFH4210DTRPBF-448
SP001575718
IRFH4210DTRPBFDKR
IRFH4210DTRPBFCT
IRFH4210DTRPBFTR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH4210DTRPBF
Documenti e supporti
Datasheets
1(IRFH4210DPbF)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Environmental Information
1(PQFN 5x6 RoHS Compliance)
Featured Product
()
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRFH4210DPbF)
Simulation Models
1(IRFH4210DPBF Spice Model)
Quantità Prezzo
QUANTITÀ: 1
Prezzo unitario: $2.48
Imballaggio: Cut Tape (CT)
Moltiplicatore minimo: 1
Imballaggio: Cut Tape (CT)
Moltiplicatore minimo: 1
Sostituti
-