Technology
                    
					SiC (Silicon Carbide) Schottky
					
                   
                    Voltage - DC Reverse (Vr) (Max)
                    
					650 V
					
                   
                    Current - Average Rectified (Io)
                    
					12A
					
                   
                    Voltage - Forward (Vf) (Max) @ If
                    
					1.8 V @ 12 A
					
                   
                    Speed
                    
					No Recovery Time > 500mA (Io)
					
                   
                    Reverse Recovery Time (trr)
                    
					0 ns
					
                   
                    Current - Reverse Leakage @ Vr
                    
					60 µA @ 650 V
					
                   
                    Capacitance @ Vr, F
                    
					328pF @ 1V, 1MHz
					
                   
                    Mounting Type
                    
					Surface Mount
					
                   
                    Package / Case
                    
					4-VSFN Exposed Pad
					
                   
                    Supplier Device Package
                    
					5-DFN (8x8)
					
                   
                    Operating Temperature - Junction
                    
					175°C
					
                   
                    Base Product Number
                    
					WNSC1