English
Spain
Rusia
China
GermanyIPI320N20N3GAKSA1
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IPI320N20N3GAKSA1
DESCRIZIONE
MOSFET N-CH 200V 34A TO262-3
DESCRIZIONE DETTAGLIATA
N-Channel 200 V 34A (Tc) 136W (Tc) Through Hole PG-TO262-3
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
500
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
32mOhm @ 34A, 10V
Vgs(th) (Max) @ Id
4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2350 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI320
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IPI320N20N3 G-ND
IPI320N20N3 G
SP000714312
2156-IPI320N20N3GAKSA1
IPI320N20N3G
INFINFIPI320N20N3GAKSA1
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI320N20N3GAKSA1
Documenti e supporti
Datasheets
1(IPx320N20N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx320N20N3 G)
Simulation Models
1(OptiMOS™ Power MOSFET 200V N-Channel Spice Model)
Quantità Prezzo
-
Sostituti
-