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GermanyHGT1S2N120CN
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
HGT1S2N120CN
DESCRIZIONE
IGBT 1200V 13A 104W I2PAK
DESCRIZIONE DETTAGLIATA
IGBT NPT 1200 V 13 A 104 W Through Hole TO-262
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
13 A
Current - Collector Pulsed (Icm)
20 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 2.6A
Power - Max
104 W
Switching Energy
96µJ (on), 355µJ (off)
Input Type
Standard
Gate Charge
30 nC
Td (on/off) @ 25°C
25ns/205ns
Test Condition
960V, 2.6A, 51Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package
TO-262
Base Product Number
HGT1S2N120
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/onsemi HGT1S2N120CN
Documenti e supporti
Datasheets
1(HGT(P2,1S)2N120CN)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(HGT(P2,1S)2N120CN)
Quantità Prezzo
-
Sostituti
-