English
Spain
Rusia
China
GermanyIGT60R070D1ATMA1
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IGT60R070D1ATMA1
DESCRIZIONE
GANFET N-CH 600V 31A 8HSOF
DESCRIZIONE DETTAGLIATA
N-Channel 600 V 31A (Tc) 125W (Tc) Surface Mount PG-HSOF-8-3
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
IGT60R070D1ATMA1 Models
PACCHETTO STANDARD
2,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
CoolGaN™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-3
Package / Case
8-PowerSFN
Base Product Number
IGT60R070
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SP001300364
IGT60R070D1ATMA1DKR
IGT60R070D1ATMA1CT
2156-IGT60R070D1ATMA1TR
IGT60R070D1ATMA1TR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IGT60R070D1ATMA1
Documenti e supporti
Datasheets
()
Other Related Documents
()
Product Brief
1(CoolGaN™ 600 V e-mode GaN HEMTs Brief)
Video File
()
Article Library
1(Why CoolGaN)
HTML Datasheet
()
EDA Models
1(IGT60R070D1ATMA1 Models)
Reliability Documents
1(Realiability and Qualification of CoolGaN)
Quantità Prezzo
-
Sostituti
Parte n. : IGT60R070D1ATMA4
Produttore. : Infineon Technologies
Quantità disponibile. : 3,023
Prezzo unitario. : $13.07000
Tipo sostitutivo. : Direct
Quantità disponibile. : 3,023
Prezzo unitario. : $13.07000
Tipo sostitutivo. : Direct