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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFR18N15DPBF
DESCRIZIONE
MOSFET N-CH 150V 18A DPAK
DESCRIZIONE DETTAGLIATA
N-Channel 150 V 18A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
75
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
*IRFR18N15DPBF
SP001571416
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFR18N15DPBF
Documenti e supporti
Datasheets
1(IRFR18N15DPbF, IRFU18N15DPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRFR18N15D Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRFR18N15DPbF, IRFU18N15DPbF)
Simulation Models
1(IRFR18N15D Spice Model)
Quantità Prezzo
-
Sostituti
Parte n. : STD6NF10T4
Produttore. : STMicroelectronics
Quantità disponibile. : 2,392
Prezzo unitario. : $1.11000
Tipo sostitutivo. : Similar
Quantità disponibile. : 2,392
Prezzo unitario. : $1.11000
Tipo sostitutivo. : Similar