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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SPD50N03S2-07G
DESCRIZIONE
N-CHANNEL POWER MOSFET
DESCRIZIONE DETTAGLIATA
N-Channel 30 V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
473
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
OptiMOS®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs
46.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2170 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IFEINFSPD50N03S2-07G
2156-SPD50N03S2-07G
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPD50N03S2-07G
Documenti e supporti
Datasheets
1(Datasheet)
Quantità Prezzo
-
Sostituti
-