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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
TP90H180PS
DESCRIZIONE
GANFET N-CH 900V 15A TO220AB
DESCRIZIONE DETTAGLIATA
N-Channel 900 V 15A (Tc) 78W (Tc) Through Hole TO-220AB
PRODUTTORE
Transphorm
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
Transphorm
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
205mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 8 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
780 pF @ 600 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
TP90H180
Classificazioni ambientali e di esportazione
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TP90H180PS
Documenti e supporti
Datasheets
1(TP90H180PS Preliminary)
Product Training Modules
1(GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies)
Video File
()
PCN Obsolescence/ EOL
1(TPH32/TPH32 02/Mar/2021)
HTML Datasheet
1(TP90H180PS Preliminary)
Quantità Prezzo
-
Sostituti
-