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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
NSBA113EF3T5G
DESCRIZIONE
TRANS PREBIAS PNP 50V SOT1123
DESCRIZIONE DETTAGLIATA
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 254 mW Surface Mount SOT-1123
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
NSBA113EF3T5G Models
PACCHETTO STANDARD
8,000
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Last Time Buy
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)
500nA
Power - Max
254 mW
Mounting Type
Surface Mount
Package / Case
SOT-1123
Supplier Device Package
SOT-1123
Base Product Number
NSBA113
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
ONSONSNSBA113EF3T5G
2832-NSBA113EF3T5G-488
2156-NSBA113EF3T5G-OS
2832-NSBA113EF3T5GTR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/onsemi NSBA113EF3T5G
Documenti e supporti
Datasheets
1(M(M)UN2130/L, MUN5130, DTA113EE/EM3, NSBA113EF3)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 02/Oct/2023)
PCN Design/Specification
1(Mult Devices Tape Design 06/Mar/2018)
HTML Datasheet
1(M(M)UN2130/L, MUN5130, DTA113EE/EM3, NSBA113EF3)
EDA Models
1(NSBA113EF3T5G Models)
Quantità Prezzo
-
Sostituti
-