Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)
24V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Rds On (Max) @ Id, Vgs
23mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.5nC @ 4.5V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
8-ECH
Base Product Number
ECH8601