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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFU4105ZPBF
DESCRIZIONE
MOSFET N-CH 55V 30A IPAK
DESCRIZIONE DETTAGLIATA
N-Channel 55 V 30A (Tc) 48W (Tc) Through Hole IPAK (TO-251AA)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
2156-IRFU4105ZPBF
*IRFU4105ZPBF
SP001552434
INFINFIRFU4105ZPBF
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU4105ZPBF
Documenti e supporti
Datasheets
1(IRFR4105ZPbF, IRFU4105ZPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRFR4105ZPbF, IRFU4105ZPbF)
Simulation Models
1(IRFR4105Z Saber Model)
Quantità Prezzo
-
Sostituti
Parte n. : IRFU4615PBF
Produttore. : Infineon Technologies
Quantità disponibile. : 1,792
Prezzo unitario. : $1.84000
Tipo sostitutivo. : Similar
Quantità disponibile. : 1,792
Prezzo unitario. : $1.84000
Tipo sostitutivo. : Similar