Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
IRFU4105ZTRR
DESCRIZIONE
MOSFET N-CH 55V 30A TO251AA
DESCRIZIONE DETTAGLIATA
N-Channel 55 V 30A (Tc) 48W (Tc) Through Hole TO-251AA
PRODUTTORE
Vishay Siliconix
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD

Specifiche tecniche

Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IRFU4105

Classificazioni ambientali e di esportazione

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

-

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFU4105ZTRR

Documenti e supporti

Datasheets
1(IRFR4105Z, IRFU4105Z)
HTML Datasheet
1(IRFR4105Z, IRFU4105Z)

Quantità Prezzo

-

Sostituti

-