English
Spain
Rusia
China
GermanyNTD4858N-35G
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
NTD4858N-35G
DESCRIZIONE
MOSFET N-CH 25V 11.2A/73A IPAK
DESCRIZIONE DETTAGLIATA
N-Channel 25 V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Through Hole IPAK
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
NTD4858N-35G Models
PACCHETTO STANDARD
75
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
11.2A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.2 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1563 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta), 54.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Stub Leads, IPAK
Base Product Number
NTD4858
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
2156-NTD4858N-35G-OS
ONSONSNTD4858N-35G
NTD4858N-35G-ND
NTD4858N-35GOS
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4858N-35G
Documenti e supporti
Datasheets
1(NTD4858N)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 08/Jul/2021)
PCN Assembly/Origin
1(Mult Devices 29/Aug/2017)
HTML Datasheet
1(NTD4858N)
EDA Models
1(NTD4858N-35G Models)
Quantità Prezzo
-
Sostituti
-