English
Spain
Rusia
China
GermanyNTMD2P01R2
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
NTMD2P01R2
DESCRIZIONE
MOSFET 2P-CH 16V 2.3A 8SOIC
DESCRIZIONE DETTAGLIATA
Mosfet Array 16V 2.3A 710mW Surface Mount 8-SOIC
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
NTMD2P01R2 Models
PACCHETTO STANDARD
2,500
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
16V
Current - Continuous Drain (Id) @ 25°C
2.3A
Rds On (Max) @ Id, Vgs
100mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
750pF @ 16V
Power - Max
710mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
NTMD2P
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi NTMD2P01R2
Documenti e supporti
Datasheets
1(NTMD2P01R2)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 30/Jun/2006)
PCN Design/Specification
1(Multiple Devices Copper Wire 20/Aug/2008)
HTML Datasheet
1(NTMD2P01R2)
EDA Models
1(NTMD2P01R2 Models)
Quantità Prezzo
-
Sostituti
-