English
Spain
Rusia
China
GermanyIXFN27N120SK
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IXFN27N120SK
DESCRIZIONE
SIC 2N-CH 1200V SOT227B
DESCRIZIONE DETTAGLIATA
Mosfet Array 1200V (1.2kV) Chassis Mount SOT-227B
PRODUTTORE
IXYS
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
10
STOCK FORNITORI
Specifiche tecniche
Mfr
IXYS
Series
-
Package
Tube
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
-
Operating Temperature
-
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227B
Base Product Number
IXFN27
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/IXYS IXFN27N120SK
Documenti e supporti
Datasheets
1(IXFN27N120SK)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(SiC Power MOSFET and Diode Gate Drive Evaluation Board Kit)
PCN Obsolescence/ EOL
1(DK OBS NOTICE)
Quantità Prezzo
-
Sostituti
-