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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
APT7F80K
DESCRIZIONE
MOSFET N-CH 800V 7A TO220
DESCRIZIONE DETTAGLIATA
N-Channel 800 V 7A (Tc) 225W (Tc) Through Hole TO-220 [K]
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
50
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
POWER MOS 8™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1335 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
225W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 [K]
Package / Case
TO-220-3
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
APT7F80K-ND
150-APT7F80K
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT7F80K
Documenti e supporti
Datasheets
()
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 30/Apr/2015)
HTML Datasheet
()
Quantità Prezzo
-
Sostituti
-