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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IPD90R1K2C3BTMA1
DESCRIZIONE
MOSFET N-CH 900V 5.1A TO252-3
DESCRIZIONE DETTAGLIATA
N-Channel 900 V 5.1A (Tc) 83W (Tc) Surface Mount PG-TO252-3
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
2,500
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
710 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IPD90
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IPD90R1K2C3BTMA1CT
IPD90R1K2C3
IPD90R1K2C3DKR
IPD90R1K2C3CT
IPD90R1K2C3BTMA1DKR
SP000413720
IPD90R1K2C3-ND
IPD90R1K2C3BTMA1TR
IPD90R1K2C3CT-ND
IPD90R1K2C3DKR-ND
IPD90R1K2C3TR-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD90R1K2C3BTMA1
Documenti e supporti
Datasheets
1(IPD90R1K2C3)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPD90R1K2C3)
Quantità Prezzo
-
Sostituti
Parte n. : STD6N95K5
Produttore. : STMicroelectronics
Quantità disponibile. : 14,700
Prezzo unitario. : $2.71000
Tipo sostitutivo. : Similar
Quantità disponibile. : 14,700
Prezzo unitario. : $2.71000
Tipo sostitutivo. : Similar