Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
IRF5810TRPBF
DESCRIZIONE
MOSFET 2P-CH 20V 2.9A 6TSOP
DESCRIZIONE DETTAGLIATA
Mosfet Array 20V 2.9A 960mW Surface Mount 6-TSOP
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000

Specifiche tecniche

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.9A
Rds On (Max) @ Id, Vgs
90mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 16V
Power - Max
960mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
IRF58

Classificazioni ambientali e di esportazione

Moisture Sensitivity Level (MSL)
2 (1 Year)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Altri nomi

IRF5810TRPBFTR
SP001574802
IRF5810TRPBF-ND
IRF5810TRPBFCT
IRF5810TRPBFDKR

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRF5810TRPBF

Documenti e supporti

Datasheets
1(IRF5810PBF)
Other Related Documents
1(IR Part Numbering System)
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1(Data Processing Systems)
HTML Datasheet
1(IRF5810PBF)

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