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GermanyIPC020N10L3X1SA1
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IPC020N10L3X1SA1
DESCRIZIONE
MOSFET N-CH 100V 1A SAWN ON FOIL
DESCRIZIONE DETTAGLIATA
N-Channel 100 V 1A (Tj) Surface Mount Sawn on foil
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
2.1V @ 12µA
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
Sawn on foil
Package / Case
Die
Base Product Number
IPC020N
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
448-IPC020N10L3X1SA1
IPC020N10L3X1SA1-ND
2156-IPC020N10L3X1SA1
SP001006962
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPC020N10L3X1SA1
Documenti e supporti
Datasheets
1(IPC020N10L3)
Environmental Information
1(RoHS Certificate)
HTML Datasheet
1(IPC020N10L3)
Quantità Prezzo
-
Sostituti
-