Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 10 V
Power Dissipation (Max)
1W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOP (5.5x6.0)
Package / Case
8-SOIC (0.173", 4.40mm Width)
Base Product Number
TPC8042