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GermanyTSM2N60SCW RPG
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
TSM2N60SCW RPG
DESCRIZIONE
MOSFET N-CH 600V 600MA SOT223
DESCRIZIONE DETTAGLIATA
N-Channel 600 V 600mA (Tc) 2.5W (Tc) Surface Mount SOT-223
PRODUTTORE
Taiwan Semiconductor Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
2,500
STOCK FORNITORI
Specifiche tecniche
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
435 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA
Base Product Number
TSM2
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
TSM2N60SCW RPGCT-ND
TSM2N60SCWRPGTR
TSM2N60SCWRPGCT
TSM2N60SCW RPGDKR
TSM2N60SCWRPGDKR
TSM2N60SCW RPGTR
TSM2N60SCW RPGCT
TSM2N60SCW RPGTR-ND
TSM2N60SCW RPGDKR-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM2N60SCW RPG
Documenti e supporti
Datasheets
1(TSM2N60S)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 17/Sep/2017)
HTML Datasheet
1(TSM2N60S)
Quantità Prezzo
-
Sostituti
Parte n. : STN3N45K3
Produttore. : STMicroelectronics
Quantità disponibile. : 12,527
Prezzo unitario. : $0.98000
Tipo sostitutivo. : Similar
Quantità disponibile. : 12,527
Prezzo unitario. : $0.98000
Tipo sostitutivo. : Similar