Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
3A, 2.8A
Rds On (Max) @ Id, Vgs
125mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
525pF @ 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
NDS994