English
Spain
Rusia
China
GermanyAPT40SM120S
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
APT40SM120S
DESCRIZIONE
SICFET N-CH 1200V 41A D3PAK
DESCRIZIONE DETTAGLIATA
N-Channel 1200 V 41A (Tc) 273W (Tc) Surface Mount D3PAK
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
2560 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
273W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D3PAK
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
150-APT40SM120S
APT40SM120S-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT40SM120S
Documenti e supporti
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 16/Oct/2017)
Quantità Prezzo
-
Sostituti
-