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GermanyIRFU3504Z
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFU3504Z
DESCRIZIONE
MOSFET N-CH 40V 42A IPAK
DESCRIZIONE DETTAGLIATA
N-Channel 40 V 42A (Tc) 90W (Tc) Through Hole IPAK (TO-251AA)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
75
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9mOhm @ 42A, 10V
Vgs(th) (Max) @ Id
4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU3504Z
Documenti e supporti
Datasheets
1(IRFR3504Z, IRFU3504Z)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
Simulation Models
1(IRFR3504Z Saber Model)
Quantità Prezzo
-
Sostituti
-