English
Spain
Rusia
China
GermanyGPA030A135MN-FDR
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
GPA030A135MN-FDR
DESCRIZIONE
IGBT 1350V 60A 329W TO3PN
DESCRIZIONE DETTAGLIATA
IGBT Trench Field Stop 1350 V 60 A 329 W Through Hole TO-3PN
PRODUTTORE
SemiQ
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
SemiQ
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1350 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
90 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
Power - Max
329 W
Switching Energy
4.4mJ (on), 1.18mJ (off)
Input Type
Standard
Gate Charge
300 nC
Td (on/off) @ 25°C
30ns/145ns
Test Condition
600V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)
450 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PN
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
1560-1221-1-ND
1560-1221-1
1560-1221-2
1560-1221-5
1560-1221-2INACTIVE
GPA030A135MNFDR
1560-1221-2-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/SemiQ GPA030A135MN-FDR
Documenti e supporti
Datasheets
1(GPA030A135MN-FDR)
PCN Obsolescence/ EOL
1(DK OBS NOTICE)
Quantità Prezzo
-
Sostituti
-