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GermanyFQS4900TF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
FQS4900TF
DESCRIZIONE
MOSFET N/P-CH 60V 1.3A 8SOIC
DESCRIZIONE DETTAGLIATA
Mosfet Array 60V, 300V 1.3A, 300mA 2W Surface Mount 8-SOIC
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
FQS4900TF Models
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60V, 300V
Current - Continuous Drain (Id) @ 25°C
1.3A, 300mA
Rds On (Max) @ Id, Vgs
550mOhm @ 650mA, 10V
Vgs(th) (Max) @ Id
1.95V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
2.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
FQS4900
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
2832-FQS4900TF-488
FQS4900TFDKR
2832-FQS4900TFTR
FQS4900TFTR
FQS4900TF-ND
FQS4900TFCT
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi FQS4900TF
Documenti e supporti
Environmental Information
()
PCN Design/Specification
()
PCN Assembly/Origin
1(Alt. Assembly Location 03/Mar/2016)
PCN Packaging
1(Mult Devices 24/Oct/2017)
EDA Models
1(FQS4900TF Models)
Quantità Prezzo
-
Sostituti
-