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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
JANTXV2N6788
DESCRIZIONE
MOSFET N-CH 100V 6A TO205AF
DESCRIZIONE DETTAGLIATA
N-Channel 100 V 6A (Tc) 800mW (Tc) Through Hole TO-205AF (TO-39)
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
350mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
800mW (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/555
Mounting Type
Through Hole
Supplier Device Package
TO-205AF (TO-39)
Package / Case
TO-205AF Metal Can
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
JANTXV2N6788-MIL
150-JANTXV2N6788
JANTXV2N6788-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation JANTXV2N6788
Documenti e supporti
Datasheets
1(2N6788,2N6790)
Environmental Information
()
PCN Obsolescence/ EOL
()
Quantità Prezzo
-
Sostituti
-