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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
NTMD6601NR2G
DESCRIZIONE
MOSFET 2N-CH 80V 1.1A 8SOIC
DESCRIZIONE DETTAGLIATA
Mosfet Array 80V 1.1A 600mW Surface Mount 8-SOIC
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
NTMD6601NR2G Models
PACCHETTO STANDARD
2,500
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
1.1A
Rds On (Max) @ Id, Vgs
215mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 25V
Power - Max
600mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
NTMD66
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
ONSONSNTMD6601NR2G
2156-NTMD6601NR2G-ONTR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi NTMD6601NR2G
Documenti e supporti
Datasheets
1(NTMD6601NR2G)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 05/Oct/2010)
HTML Datasheet
1(NTMD6601NR2G)
EDA Models
1(NTMD6601NR2G Models)
Quantità Prezzo
-
Sostituti
-