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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
PEMD19,115
DESCRIZIONE
TRANS PREBIAS 1NPN 1PNP SOT666
DESCRIZIONE DETTAGLIATA
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
PRODUTTORE
Nexperia USA Inc.
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
4,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Nexperia USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
22kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
-
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-666
Base Product Number
PEMD19
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
PEMD19 T/R
934058924115
NEXNXPPEMD19,115
PEMD19 T/R-ND
2156-PEMD19,115-NEX
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Nexperia USA Inc. PEMD19,115
Documenti e supporti
Datasheets
1(PEMD,PUMD19)
PCN Obsolescence/ EOL
()
PCN Packaging
()
HTML Datasheet
1(PEMD,PUMD19)
Quantità Prezzo
-
Sostituti
-