English
Spain
Rusia
China
GermanyNVMD6P02R2G
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
NVMD6P02R2G
DESCRIZIONE
MOSFET 2P-CH 20V 4.8A 8SOIC
DESCRIZIONE DETTAGLIATA
Mosfet Array 20V 4.8A 750mW Surface Mount 8-SOIC
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
2,500
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4.8A
Rds On (Max) @ Id, Vgs
33mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1700pF @ 16V
Power - Max
750mW
Operating Temperature
-
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
NVMD6
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
2156-NVMD6P02R2G-OS
ONSONSNVMD6P02R2G
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi NVMD6P02R2G
Documenti e supporti
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 01/Oct/2021)
Quantità Prezzo
-
Sostituti
-