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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
JAN2N3960
DESCRIZIONE
TRANS NPN 12V TO18
DESCRIZIONE DETTAGLIATA
Bipolar (BJT) Transistor NPN 12 V 400 mW Through Hole TO-18 (TO-206AA)
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
100
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
12 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 3mA, 30mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 1V
Power - Max
400 mW
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/399
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Supplier Device Package
TO-18 (TO-206AA)
Base Product Number
2N3960
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
1086-20938-MIL
1086-20938-ND
1086-20938
150-JAN2N3960
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microsemi Corporation JAN2N3960
Documenti e supporti
Datasheets
1(2N3960)
Environmental Information
()
Quantità Prezzo
-
Sostituti
-